UCC5310MCDR: Applications, Datasheet and Features

Product Overview

Part Number: UCC5310MCDR

Manufacturer: Texas Instruments

Description: IC-5310 DGTL ISO 3KV 1CH GATE DRVR 8SOIC

Lead Time: Can Ship Immediately

Datasheet: Datasheet PDF

Category: Sensor and Detector Interfaces

Number of Lines: 8

Short Description

An integrated circuit (IC) designed for driving N-channel MOSFETs and IGBTs in power conversion applications, the UCC5310MCDR provides high-performance gate driver capabilities. In addition to motor control, power supplies, inverters, and electric vehicles, this gate driver has a versatile design and robust features. In space-constrained designs, it can be integrated into compact packages and has low power consumption to ensure efficient and reliable performance.

Dual independent channels enable precise control of power semiconductor devices using the UCC5310MCDR, which supports high peak currents and fast switching speeds. The gate driver provides overvoltage, undervoltage, and over-current protection as well as over-temperature protection (OTP), ensuring reliable operation and enhancing power electronics safety and reliability.

UCC5310MCDR

Product Technical Specifications

ECCN (US)	EAR99
Part Status	Active
HTS	8542.39.00.01
SVHC	Yes
Automotive	No
PPAP	No
Driver Configuration	Inverting\|Non-Inverting
Number of Drivers	1
Type	IGBT\|GaNFET\|MOSFET\|SiCFET
Number of Outputs	1
Maximum Rise Time (ns)	28
Maximum Fall Time (ns)	26
Maximum Propagation Delay Time (ns)	75
Input Logic Compatibility	CMOS
Minimum Operating Supply Voltage (V)	3
Maximum Operating Supply Voltage (V)	15
Maximum Supply Current (mA)	73
Peak Output Current (A)	4.3(Typ)
Maximum Power Dissipation (mW)	1140
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	125
Special Features	Under Voltage Lockout
Latch-Up Proof	No
Packaging	Tape and Reel
Mounting	Surface Mount
Package Height	1.5(Max)
Package Width	3.98(Max)
Package Length	5(Max)
PCB changed	8
Standard Package Name	SO
Supplier Package	SOIC
Pin Count	8
Lead Shape	Gull-wing

UCC5310MCDR Features

In various power conversion applications, the UCC5310MCDR gate driver IC (Integrated Circuit) is designed to drive N-channel MOSFETs and IGBTs. Here are some details about its features:

Dual-Channel Operation: UCC5310MCDR supports two independent channels, allowing two power semiconductor devices to be controlled simultaneously. Inverters, motor drives, and power supplies can be controlled efficiently and precisely with this dual-channel configuration.

High Peak Current: In addition to delivering high peak currents, each channel of the UCC5310MCDR can rapidly charge and discharge IGBTs and MOSFETs. Power conversion systems with high peak current capabilities can switch at high speeds and improve overall efficiency.

Fast Switching Speeds: By minimizing switching losses, the UCC5310MCDR maximizes power electronics efficiency and reliability. Optimal performance is especially achieved through this feature when high-frequency switching is required.

Wide Input Voltage Range: A wide voltage range is supported by the UCC5310MCDR, allowing it to operate in a variety of power electronics applications. Integrating multiple power supply configurations is made simpler with a wide input voltage range.

Integrated Protection Features: Power conversion systems are ensured to be reliable by this gate driver IC, which incorporates essential protection features. The device as well as the connected power semiconductor devices are protected through such features as under-voltage lockout (UVLO), over-current protection (OCP), and over-temperature protection (OTP).

Compact Package: Featuring a compact package, the UCC5310MCDR can easily be integrated into electronic designs with space restrictions. Power electronics solutions can be compact and efficient due to its small footprint and surface-mountable design.

Low-Power Operation: Despite offering high performance, the UCC5310MCDR features low power consumption. As a result, battery-powered applications consume less energy and life batteries last longer.

High Noise Immunity: A high level of noise immunity is built into the UCC5310MCDR to ensure reliable performance in noisy environments. When operating under challenging conditions, this feature preserves signal integrity and stability.

UCC5310MCDR Applications

In various power conversion applications, the UCC5310MCDR gate driver IC (Integrated Circuit) can be used to drive N-channel MOSFETs and IGBTs. Taking a closer look at its applications:

Motor Drives: As a power semiconductor device for driving electric motors, UCC5310MCDR is typically used primarily in motor drive systems. Through high peak currents and fast switching speeds, gate drivers ensure the efficient and reliable operation of motors in industrial machinery, electric vehicles, and robotics.

Power Supplies: Switch-mode power supplies (SMPS) commonly use the UCC5310MCDR to control the switching of MOSFETs and IGBTs. The gate driver ensures stable and reliable power delivery to connected loads by providing precise and efficient switching control.

Inverters: Various power semiconductor devices are controlled by gate drivers such as the UCC5310MCDR in inverter systems, including renewable energy systems (solar inverters, wind turbines), uninterruptible power supplies (UPS), and variable frequency drives (VFDs). With gate drivers, DC power can be converted without loss of efficiency or precision into AC power.

(EVs) and (HEVs): MCDRs serve an essential role in electric and hybrid vehicle powertrain systems, where they switch MOSFETs or IGBTs in motor drive circuits, battery management systems, and on-board chargers. Electric and hybrid vehicle systems benefit from the gate driver's ability to provide efficient and reliable switching control.

Industrial Automation: UCC5310MCDRs are used in servo drives, motion control systems, and robotic applications in industrial automation. Gate drivers enable industrial machines and automation equipment to achieve precise positioning, speed control, and motion profiles using power semiconductor devices.

Renewable Energy Systems: Solar inverters and wind turbine converters use UCC5310MCDR to control power semiconductor devices to generate renewable energy. Solar panels and wind turbines (solar panels and wind turbines) are able to generate renewable energy more efficiently and reliably by controlling the flow of energy between them and the electrical grid or energy storage system.

Uninterruptible Power Supplies (UPS): Power semiconductor devices like the UCC5310MCDR are used in UPS systems for converting DC power from batteries into AC power during power outages for critical loads. Providing uninterrupted power supply to connected equipment and systems, the gate driver ensures efficient and reliable power transfer.

Various power conversion systems across industries use the UCC5310MCDR gate driver IC to enable efficient, reliable, and precise control of power semiconductor devices, such as motor drives, power supplies, inverters, industrial automation, UPS systems, and others. A modern power electronics design relies on it because of its versatility, performance, and reliability.

Working Principle

The UCC5310MCDR operates based on the principle of gate driver functionality, which involves controlling the switching of power semiconductor devices such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications. Here's a simplified explanation of its working principle:

Signal Generation: When a power semiconductor device is turned on or off, the gate driver receives input signals from a controller or microcontroller. Typically, gate drive signals enable or disable the conductivity of MOSFETs and IGBTs by controlling the voltage applied to their gates.

Signal Conditioning: To drive the power semiconductor device effectively, the UCC5310MCDR may include signal conditioning circuitry. Depending on the MOSFET or IGBT gate voltage and current levels, this may involve level shifting, pulse shaping, and isolation techniques.

Gate Drive Generation: Gate drivers use conditioned input signals to generate gate drive signals for controlling switching of power semiconductor devices. MOSFETs and IGBTs are powered on and off by gate drive signals that contain voltage pulses.

High Peak Current Delivery: This power semiconductor device can deliver high peak currents to the gate during switching transitions with the UCC5310MCDR. Using this high peak current, MOSFETs or IGBTs can switch at high speeds and minimize switching losses while rapidly charging and discharging their gate capacitance.

Protection and Monitoring: To ensure that the power semiconductor device and the overall power conversion system are safe and reliable, the gate driver may incorporate protection and monitoring options. A number of mechanisms may be used, for example, an under-voltage lockout (UVLO), an overcurrent protection (OCP), and an over-temperature protection (OTP).

Output Stage Isolation: Gate drivers can isolate input signals from output stages of power semiconductor devices in some applications. Control circuitry is therefore protected from spikes in voltage during switching operations, increasing system safety and reliability.

Final Verdict

With the UCC5310MCDR, power semiconductor devices can be driven efficiently, reliably, and with high performance, enabling innovation and enabling the development of efficient, reliable, and high-performance power electronics systems. An IC is a key enabler of modern power conversion designs because of its proven performance and comprehensive features. It promises enhanced performance, reliability, and efficiency, regardless of the applications it is used for.

With fast switching speeds, high peak current delivery, and comprehensive protection features, the UCC5310MCDR excels in a wide range of applications, including motor drives, power supplies, and electric vehicles. As a compact device, it excels at integrating into a wide range of electronic designs because of its wide voltage input range and low power consumption.