Name: EPC2016C GANFET N-CH 100V 18A DIE
Brand: EPC
SKU: EPC2016C
Price: 2.072 USD
Availability: InStock
Rating: 4.9 (2 reviews)

Question 1

What is the Mfr

Accepted Answer

Mfr refers to the component's producing company, whose brand and manufacturing processes directly impact the component's performance, consistency, and traceability, making it a key reference during selection.

Question 2

What is the Series

Accepted Answer

Series indicates a manufacturer’s organized range of components, often named with a common prefix or code, to streamline product selection and ensure compatibility across similar models.

Question 3

What is the Package

Accepted Answer

his term denotes the protective casing (often made of plastic, ceramic, or metal) that encapsulates an integrated circuit, determining its size, reliability, and suitability for different mounting technologies like through-hole or SMT.

Question 4

What is the Package

Accepted Answer

his term denotes the protective casing (often made of plastic, ceramic, or metal) that encapsulates an integrated circuit, determining its size, reliability, and suitability for different mounting technologies like through-hole or SMT.

Question 5

What is the Package

Accepted Answer

his term denotes the protective casing (often made of plastic, ceramic, or metal) that encapsulates an integrated circuit, determining its size, reliability, and suitability for different mounting technologies like through-hole or SMT.

Question 6

What is the Base Product Number

Accepted Answer

By using the Base Product Number, manufacturers and customers can efficiently communicate about component families without detailing every specification, streamlining the procurement process.

Question 7

What is the Power Dissipation (Max)

Accepted Answer

Maximum Power Dissipation refers to the highest amount of power that an electronic component or device can continuously convert into heat while maintaining normal functionality and without causing permanent damage. It is a key safety and reliability param

Question 8

What is the Vgs(th) (Max) @ Id

Accepted Answer

Vgs(th)(Max) @ Id represents the maximum gate-source threshold voltage required to open the channel and initiate conduction in a MOSFET under a specified drain current (Id), measured in Volts (V). It defines the upper voltage threshold for the MOSFET to e

Question 9

What is the Supplier Device Package

Accepted Answer

Supplier Device Package refers to the specific nomenclature or code used by a component manufacturer or distributor (supplier) to designate the physical outline and pin arrangement of an electronic component they produce or sell.

Question 10

What is the Package / Case

Accepted Answer

Package / Case refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

Question 11

What is the Product Status

Accepted Answer

Product Status indicates the commercial availability and production stage of the component, such as Active, Not for New Design (NRND), Obsolete, or Last Time Buy (LTB).

Question 12

What is the Drive Voltage (Max Rds On, Min Rds On)

Accepted Answer

This parameter specifies the gate-source voltage range required to fully enhance a power MOSFET's channel, transitioning it from the off-state to the on-state with a defined, low drain-source resistance. The maximum value (Max Rds On) ensures the device i

Question 13

What is the Vgs (Max)

Accepted Answer

This parameter specifies the absolute maximum voltage that can be applied between the gate and source terminals of a field-effect transistor (FET) without risking dielectric breakdown of the internal gate oxide layer. Exceeding this rating, typically meas

Question 14

What is the Drain to Source Voltage (Vdss)

Accepted Answer

This parameter specifies the maximum voltage that can be continuously applied between the drain and source terminals of a power MOSFET while the device is in its off-state, measured in volts (V). It is a critical absolute maximum rating that defines the d

Question 15

What is the Input Capacitance (Ciss) (Max) @ Vds

Accepted Answer

This parameter specifies the maximum equivalent capacitance measured between the gate and source terminals of a power MOSFET, with the drain and source shorted, at a specified drain-source voltage (Vds). It is a key dynamic characteristic that determines

Question 16

What is the Operating Temperature

Accepted Answer

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the powe

Question 17

What is the Technology

Accepted Answer

This parameter specifies the fundamental physical principle, manufacturing process, or architectural approach that defines a component's core operation and construction. It determines key performance boundaries, such as speed, power efficiency, integratio

Question 18

What is the FET Type

Accepted Answer

A field-effect transistor categorized by its channel structure and operating principle, primarily including Junction FET (JFET), Metal-Oxide-Semiconductor FET (MOSFET), and Metal-Semiconductor FET (MESFET). The type dictates fundamental characteristics su

Question 19

What is the Current - Continuous Drain (Id) @ 25°C

Accepted Answer

Specifies the maximum continuous direct current that can flow through the drain terminal of a field-effect transistor (FET) when its case temperature is maintained at 25°C. This is a key Absolute Maximum Rating that defines the upper boundary of the devic

Question 20

What is the Mounting Type

Accepted Answer

Mounting Type refers to the standardized classification of the method by which an electronic component or module is physically secured and electrically connected to a printed circuit board, chassis, or panel. It defines how the component integrates into t

Question 21

What is the FET Feature

Accepted Answer

This parameter specifies a distinctive functional or structural characteristic integrated into a Field-Effect Transistor beyond its basic switching or amplification role. Examples include an integrated gate protection diode (e.g., Zener clamp), a logic-le

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