Name: STGW80H65DFB IGBT 650V 120A 469W TO-247
Brand: STMicroelectronics
SKU: STGW80H65DFB
Price: 5.992 USD
Availability: InStock
Rating: 4.9 (2 reviews)

Question 1

What is the Mfr

Accepted Answer

Mfr refers to the component's producing company, whose brand and manufacturing processes directly impact the component's performance, consistency, and traceability, making it a key reference during selection.

Question 2

What is the Series

Accepted Answer

Series indicates a manufacturer’s organized range of components, often named with a common prefix or code, to streamline product selection and ensure compatibility across similar models.

Question 3

What is the Package

Accepted Answer

his term denotes the protective casing (often made of plastic, ceramic, or metal) that encapsulates an integrated circuit, determining its size, reliability, and suitability for different mounting technologies like through-hole or SMT.

Question 4

What is the Base Product Number

Accepted Answer

By using the Base Product Number, manufacturers and customers can efficiently communicate about component families without detailing every specification, streamlining the procurement process.

Question 5

What is the Supplier Device Package

Accepted Answer

Supplier Device Package refers to the specific nomenclature or code used by a component manufacturer or distributor (supplier) to designate the physical outline and pin arrangement of an electronic component they produce or sell.

Question 6

What is the IGBT Type

Accepted Answer

IGBT Type classifies IGBTs based on their internal structure, characteristics, and optimization focus (e.g., low-speed/low-loss, high-speed).

Question 7

What is the Td (on/off) @ 25°C

Accepted Answer

This parameter specifies the turn-on and turn-off delay times of a semiconductor switching device (e.g., MOSFET, IGBT) measured at an ambient temperature of 25°C. These delays, typically in nanoseconds or microseconds, define the inherent time lag between

Question 8

What is the Switching Energy

Accepted Answer

This parameter quantifies the total energy dissipated within a power semiconductor switch (e.g., MOSFET, IGBT) during a single complete turn-on and turn-off transition. Measured in microjoules (µJ), it is the sum of the energy losses from voltage-current

Question 9

What is the Test Condition

Accepted Answer

This parameter specifies the precise set of environmental and electrical variables (e.g., temperature, supply voltage, signal frequency, load) under which a component's performance characteristics are measured and guaranteed in its datasheet. It defines t

Question 10

What is the Gate Charge

Accepted Answer

It quantifies the total electrical charge (in nanocoulombs, nC) that must be supplied to the gate terminal to fully turn on a power MOSFET or IGBT. This parameter is critical for calculating gate drive current requirements, switching losses, and the neces

Question 11

What is the Package / Case

Accepted Answer

Package / Case refers to the protective housing that encases an electronic component, providing mechanical support, electrical connections, and thermal management.

Question 12

What is the Product Status

Accepted Answer

Product Status indicates the commercial availability and production stage of the component, such as Active, Not for New Design (NRND), Obsolete, or Last Time Buy (LTB).

Question 13

What is the Current - Collector (Ic) (Max)

Accepted Answer

Maximum Collector Current is the highest continuous DC current that can flow through the collector terminal of a bipolar junction transistor (BJT) without causing permanent damage or exceeding its thermal limits. This absolute maximum rating defines the u

Question 14

What is the Voltage - Collector Emitter Breakdown (Max)

Accepted Answer

This parameter specifies the maximum allowable voltage that can be applied between the collector and emitter terminals of a bipolar junction transistor (BJT) while the base is open-circuited, before the device experiences avalanche breakdown and conducts

Question 15

What is the Current - Collector Pulsed (Icm)

Accepted Answer

This parameter specifies the maximum allowable peak current that can flow through the collector terminal of a bipolar junction transistor (BJT) for a short, pulsed duration. It defines the upper transient current limit the device can withstand without ris

Question 16

What is the Power - Max

Accepted Answer

The maximum amount of electrical energy a component can continuously convert, handle, or dissipate without risk of permanent damage or exceeding its safe operating temperature. This absolute upper limit, measured in Watts (W), is a critical thermal and el

Question 17

What is the Operating Temperature

Accepted Answer

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the powe

Question 18

What is the Input Type

Accepted Answer

This parameter specifies the nature of the electrical signal or physical quantity that a device's input circuitry is designed to accept and process. It defines the fundamental interface requirement, such as analog voltage, analog current, digital logic le

Question 19

What is the Reverse Recovery Time (trr)

Accepted Answer

This parameter specifies the time required for a power diode or similar bipolar switching device to transition from a forward-conducting state to a reverse-blocking state after the applied voltage polarity reverses. It is the interval between the current

Question 20

What is the Mounting Type

Accepted Answer

Mounting Type refers to the standardized classification of the method by which an electronic component or module is physically secured and electrically connected to a printed circuit board, chassis, or panel. It defines how the component integrates into t

Question 21

What is the Vce(on) (Max) @ Vge, Ic

Accepted Answer

This parameter specifies the maximum collector-emitter saturation voltage of an IGBT when it is fully turned on, measured under defined conditions of gate-emitter voltage (Vge) and collector current (Ic). It quantifies the primary conduction loss in the d

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