Best FHP100N07 Replacement MOSFETs for High-Performance Circuits

What is FHP100N07 MOSFET？

The FHP100N07 is a power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in high-power electronic operations. This particular MOSFET is an N-channel device, which means it conducts when a positive voltage is applied to its gate relative to its source.

 

Features of FHP100N07

Low On-Resistance (R_DS(on)): The FHP100N07 offers low on-resistance, meaning it has low power loss when it's in the"on"state, making it effective for power conversion and switching operations.

 

High Drain Current (I_D): It can handle significant current, making it suitable for high-power operations.

 

Fast Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequence operations, similar as in power inventories and motor drives.

 

Robust Design: The device is designed to handle high voltages and currents, offering trustability in demanding surroundings.

 

Thermal Management: The FHP100N07 is designed with good thermal operation characteristics, which is critical in power operations where heat dispersion is a concern.

 

Specifications of FHP100N07

Parameter	Value
Type	N-channel MOSFET
Maximum Drain-Source Voltage (Vds)	70 V
Maximum Gate-Source Voltage (Vgs)	±20 V
Continuous Drain Current (Id)	100 A (at Tj = 25°C)
Pulsed Drain Current (Id, pulse)	300 A
Gate Threshold Voltage (Vgs(th))	1.0 -2.5 V
Rds(on) (Drain-Source On-Resistance)	7.5 mΩ (typical at Vgs = 10 V)
Total Gate Charge (Qg)	70 nC (typical)
Gate Charge @ Vgs = 10 V (Qg)	70 nC
Input Capacitance (Ciss)	1350 pF (typical)
Output Capacitance (Coss)	540 pF (typical)
Reverse Transfer Capacitance (Crss)	75 pF (typical)
Thermal Resistance Junction-Ambient (RθJA)	62 °C/W
Thermal Resistance Junction-Case (RθJC)	1.5 °C/W
Package Type	TO-220
Package Code	TO-220F
Max Power Dissipation (Ptot)	125 W

 

Advantages of FHP100N07

• High Voltage Rating
• Low On-Resistance
• High-Speed Switching
• Low Gate Charge
• Thermal Stability
• Low Gate-Source Leakage Current
• High Current Capability
• Low Reverse Recovery Time
• Good RDS(on) Temperature Coefficient
• High Input Impedance
• Enhanced Robustness

 

Application of FHP100N07

• Power Supply Circuits
• DC-DC Converters
• Motor Drives
• LED Drivers
• High-Frequency Switching
• Power Amplifiers
• Power Management Systems
• Switching Regulators
• Overvoltage Protection
• Automotive Applications
• Consumer Electronics

 

Why Replace the FHP100N07?

1. Performance Needs: You might want to think about a substitute that better satisfies these needs if your application calls for a MOSFET with different electrical characteristics (e.g., greater voltage, lower R_DS(on), higher current handling).

 

2. Availability: In the event that FHP100N07 is discontinued or out of stock, you might need to locate a suitable substitute.

 

3. Cost: A less expensive MOSFET with comparable performance can be something to take into consideration if you're searching for a more affordable option. 

 

4. Thermal Management: Use a MOSFET or an indispensable package type with advanced thermal performance if the FHP100N07 is unfit to control the heat in your operation.

 

5. Manufacturing and Supply Chain Issues: An revision in the product process or a disturbance in the force chain may sometimes be the cause of a change.

 

6. Enhanced Features: More features or advancements might be available in more recent MOSFET performances, which could ameliorate your design.

 

Make sure the replacement MOSFET satisfies or surpasses the important specifications of the FHP100N07, including the gate threshold voltage (V_GS(th)), continuous drain current (I_D), and maximum drain-source voltage (V_DS).

 

The following factors should be taken into account when choosing an FHP100N07 replacement:

-Electrical Performance:

  -Drain-Source Voltage (Vds): Should be equal to or higher than the FHP100N07's maximum rating.

  -Drain Current (Id): Must handle at least the same current as the FHP100N07.

  -Gate Threshold Voltage (Vgs(th)): Should be close to the original to ensure proper switching.

  -On-Resistance (Rds(on)): Lower Rds(on) typically improves efficiency.

 

-Thermal Management:

  -Thermal Resistance (RθJA and RθJC): To duly manage heat dispersion, relief corridor need to serve thermally at least as well as the original outfit.

 

-Cost:

  -Affordability: Price should be within the means of the budget; it accounts for the cost of the factors and any variations that may be made to the assembly or design.

 

-Availability:

  -Stock Levels: The replacement should be readily available from suppliers to avoid long lead times.

 

Top FHP100N07 Replacements

Option 1: MOSFET A -IRF540N

-Specifications Comparison with FHP100N07:

  -Drain-Source Voltage (Vds): 100V (FHP100N07: 100V)

  -Drain Current (Id): 33A (FHP100N07: 50A)

  -Gate Threshold Voltage (Vgs(th)): 2-4V (FHP100N07: 2-4V)

  -On-Resistance (Rds(on)): 0.077Ω (FHP100N07: 0.07Ω)

 

-Performance:

  -High-Speed Switching: Good, but not as fast as FHP100N07.

  -Efficiency: Slightly less efficient due to higher Rds(on).

  -Thermal Performance: Good thermal management, but higher Rds(on) may impact heat dissipation.

 

-Ideal Applications:

  -General-purpose switching and power conversion applications.

 

Option 2: MOSFET B -IRLZ44N

-Specifications Comparison with FHP100N07:

  -Drain-Source Voltage (Vds): 55V (FHP100N07: 100V)

  -Drain Current (Id): 47A (FHP100N07: 50A)

  -Gate Threshold Voltage (Vgs(th)): 1-2V (FHP100N07: 2-4V)

  -On-Resistance (Rds(on)): 0.035Ω (FHP100N07: 0.07Ω)

 

-Performance:

  -Low Rds(on): Offers better efficiency and lower heat generation.

  -High-Current Applications: Suitable, but limited by lower Vds.

  -Thermal Management: Good, thanks to low Rds(on) and high current rating.

 

-Ideal Applications:

  -Low-voltage, high-current applications such as DC-DC converters and motor control.

 

Option 3: MOSFET C -IRFZ44N

-Specifications Comparison with FHP100N07:

  -Drain-Source Voltage (Vds): 55V (FHP100N07: 100V)

  -Drain Current (Id): 49A (FHP100N07: 50A)

  -Gate Threshold Voltage (Vgs(th)): 2-4V (FHP100N07: 2-4V)

  -On-Resistance (Rds(on)): 0.032Ω (FHP100N07: 0.07Ω)

 

-Performance:

  -Gate Charge: Lower gate charge compared to FHP100N07, leading to faster switching.

  -Switching Speed: Excellent, ideal for high-speed applications.

  -Reliability: High reliability for continuous operation in switching circuits.

 

-Ideal Applications:

  -High-speed switching, power supplies, and high-frequency applications.

 

Summary

Make sure the MOSFET you select for your FHP100N07 replacement satisfies the electrical and thermal requirements of the specific application. Every choice has advantages of its own and, depending on your requirements, can be more appropriate for a particular kind of circuit.

 

FAQs

1. What is the FHP100N07?

   -An N-channel MOSFET intended for high-speed switching operations is the FHP100N07. It can repel high voltages and currents and has a low on-resistance.

 

2. What are key parameters to consider when replacing the FHP100N07?

   -Voltage Rating: Corroborate that the drain-source voltage(Vds) of the relief MOSFET can support the same value or further.

 

   -Current Rating: The drain current(Id) of the new device must be equal to or lesser than the original.

 

   -Gate Threshold Voltage (Vgs(th)): Check if the replacement has a similar gate threshold voltage to ensure proper switching.

 

   -On-Resistance (Rds(on)): The replacement should have a comparable on-resistance to maintain efficiency.

 

   -Package Type: Ensure the replacement has the same package type and pin configuration for compatibility.

 

3. Can I use any N-channel MOSFET as a replacement?

   -Not every N-channel MOSFET may be used as a cover. You need to match key electrical characteristics and package specifications. Always check datasheets for detailed comparison.

 

4. Are there specific replacements from other manufacturers?

   -There are MOSFETs that are similar to the FHP100N07 from manufacturers including Infineon, ON Semiconductor, and Vishay. Check their datasheets for equivalents with similar specifications.

 

5. How do I verify if a replacement MOSFET is suitable?

   -Compare the datasheets of the FHP100N07 and the replacement MOSFET. Focusing especially on the voltage levels. At current level turn-on, resistance and gate threshold voltage are measured.

 

6. What should I do if I can't find an exact match?

   -Look for a MOSFET with a little advanced voltage and current standing if an exact match can not be attained. Ensure that its gate threshold voltage and on-resistance are close to the original part's specifications.

 

7. Are there online tools to help with finding replacements?

   -Indeed, one can locate equivalent parts based on requirements using electronic component search tools and programs like Blikai Part Selector or Octopart.

 

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